K4S641633H-F1H Datasheet - Samsung semiconductor

K4S641633H-F1H, 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high p.

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Datasheet Details

Part number:

K4S641633H-F1H

Manufacturer:

Samsung semiconductor

File Size:

112.38 KB

Description:

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4S641633H-R(B)E/N/G/C/L/F75 K4S641633H-R(B)E/N/G/C/L/F1H K4S641633H-R(B)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 FBGA Leaded (Lead Free) Interface Package - R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C

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K4S641633H-F1H 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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