K4S641633H-F1L Datasheet - Samsung semiconductor

K4S641633H-F1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every cl.

K4S641633H-F1L Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S641633H-F1L_Samsungsemiconductor.pdf

K4S641633H-F1L Datasheet Preview — Preview of K4S641633H-F1L PDF

Datasheet Details

Part number:

K4S641633H-F1L

Manufacturer:

Samsung semiconductor

File Size:

112.38 KB

Description:

1m x 16bit x 4 banks mobile sdram in 54fbga.

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K4S641633H-F1L K4S641633H-F1L 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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