Part number:
K4S641633H-F75
Manufacturer:
Samsung semiconductor
File Size:
112.38 KB
Description:
1m x 16bit x 4 banks mobile sdram in 54fbga.
K4S641633H-F75 Datasheet (112.38 KB)
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
K4S641633H-F75 Datasheet (112.38 KB)
K4S641633H-F75
Samsung semiconductor
112.38 KB
1m x 16bit x 4 banks mobile sdram in 54fbga.
📁 Related Datasheet
K4S641633H-F1H 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-F1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-C 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-G 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-N 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-R 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-RBE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641633H-RE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM (Samsung semiconductor)
