Part number:
K4S641632H
Manufacturer:
Samsung Electronics
File Size:
145.06 KB
Description:
64mb h-die sdram.
K4S641632H_SamsungElectronics.pdf
Datasheet Details
Part number:
K4S641632H
Manufacturer:
Samsung Electronics
File Size:
145.06 KB
Description:
64mb h-die sdram.
K4S641632H, 64Mb H-die SDRAM
Revision 1.5 (February, 2004) - Corrected typo.
Revision 1.6 (March, 2004) - Modified Pin Description.
Revision 1.7 (May, 2004) - Added Note 5.
sentense of tRDL parameter.
CMOS SDRAM Revision 1.8 (August, 2004) - Modified CLK cycle time(tcc) parameter in AC Characteristics.
( If you want use of C
SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.8 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) - Target spec release Revision 0.1 (July, 2003) - Preliminary spec release Revision 0.2 (August, 2003) - Modified IBIS characteristic.
Revision 1.0 (September, 2003) - Finalized.
Revision 1.1 (September, 2
K4S641632H Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
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