K4S641632H 64Mb H-die SDRAM

Samsung Electronics

Description

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 * Samsung Electronics reserves the right to .
Revision 1.

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Datasheet Specifications

Part number: K4S641632H
Manufacturer: Samsung Electronics
File Size: 145.06 KB
Datasheet: K4S641632H_SamsungElectronics.pdf
Description: 64Mb H-die SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* Ordering Information Part No. K4S640432H-TC(L)75 K4S640832H-TC(L)75 K4S641632H-TC(L)60 K4S641632H-TC(L)70 K4S641632H-TC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 16Mx4

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📁 Related Datasheet

K4S641632H-L60 K4S641632H-L70 K4S641632H-L75 K4S641632H-TC60 K4S641632H-TC70 K4S641632H-TC75

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K4S641632H 64Mb H-die SDRAM Samsung Electronics

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