K4S641632H Datasheet - Samsung Electronics

K4S641632H 64Mb H-die SDRAM

Revision 1.5 (February, 2004) - Corrected typo. Revision 1.6 (March, 2004) - Modified Pin Description. Revision 1.7 (May, 2004) - Added Note 5. sentense of tRDL parameter. CMOS SDRAM Revision 1.8 (August, 2004) - Modified CLK cycle time(tcc) parameter in AC Characteristics. ( If you want use of C.

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.8 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) - Target spec release Revision 0.1 (July, 2003) - Preliminary spec release Revision 0.2 (August, 2003) - Modified IBIS characteristic. Revision 1.0 (September, 2003) - Finalized. Revision 1.1 (September, 2.

K4S641632H Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S641632H_SamsungElectronics.pdf