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K4S280832B Datasheet - Samsung Electronics

K4S280832B 128M-bit SDRAM

The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S280832B Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S280832B_SamsungElectronics.pdf

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Datasheet Details

Part number:

K4S280832B

Manufacturer:

Samsung Electronics

File Size:

107.62 KB

Description:

128m-bit sdram.

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K4S280832B K4S280832B 128M-bit SDRAM Samsung Electronics

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