K4S280832F-TC75 Datasheet (Samsung semiconductor) - 128Mb F-die SDRAM Specification

K4S280832F-TC75, 128Mb F-die SDRAM Specification

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows preci

SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November.

2003 Samsung Electronics reserves the right to change products or specification without notice.

Rev.

0.2 November.

2003 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release.

Revision 0.1 (November, 2003) - completed DC characteristics.

Revision 0.2 (November, 2003) - Preliminary spec release.

Preliminary CMOS SDRAM Rev.

0.2 November.

K4S280832F-TC75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are