K4S280832C Datasheet - Samsung semiconductor

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K4S280832C 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

K4S280832C CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar.2000 * Samsung Electronics reserves the right.
The K4S280832C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high p.

K4S280832C_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S280832C

Manufacturer:

Samsung semiconductor

File Size:

112.74 KB

Description:

128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S280832C-TC/L75 K4S280832C-TC/L1H K4S280832C-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 4M x 8 Sense AMP 4M x 8 4M x 8 4M x 8 Refresh

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K4S280832C 128Mbit SDRAM 8Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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