K4S280832E-TL75 - 128Mb E-die SDRAM Specification

Samsung semiconductor

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Datasheet Details

Part number: K4S280832E-TL75
Manufacturer: Samsung semiconductor
File Size: 144.28 KB
Datasheet: K4S280832E-TL75_Samsungsemiconductor.pdf
Description: 128Mb E-die SDRAM Specification

K4S280832E-TL75 Product details

Description

The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for maskin.
Auto & self refresh.
64ms refresh per.

K4S280832E-TL75 Stock/Price

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