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CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks 288Mb: x9, x18, x36 CIO RLDRAM 2 Fe

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www.DataSheet.co.kr W9412G6IH 2M × 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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W9712G6KB 2M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add

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IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou

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K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to

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IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou

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SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks 128Mb: x4, x8, x16 SDRAM Features

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous

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W9825G6KH 4 M  4 BANKS  16 BITS SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address.

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HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU281622 is a 134,217,728-bit CMOS Double Data Rate(DD

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W631GG6MB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to

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