T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .
Rang
T431616C Features
* 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock
* Burst Read Single-bit Write operation
* DQM for masking
* Auto refresh and self refresh
* 3