T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.
It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).
Each of the 512K x 16 bit banks is organized as 2048 rows
T431616E Features
* Fast access time: 5/6/7 ns
* Fast clock rate: 200/166/143 MHz
* Self refresh mode: standard and low power
* Internal pipelined architecture
* 512K word x 16-bit x 2-bank
* Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or fu
