T431616E, T431616D Datasheet - TMT

T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows.

T431616E Features

* Fast access time: 5/6/7 ns

* Fast clock rate: 200/166/143 MHz

* Self refresh mode: standard and low power

* Internal pipelined architecture

* 512K word x 16-bit x 2-bank

* Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or fu

T431616D_TMT.pdf

T431616E Datasheet Preview — This datasheet PDF includes multiple part numbers: T431616E, T431616D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

T431616E, T431616D

Manufacturer:

TMT

File Size:

759.46 KB

Description:

1m x 16 sdram 512k x 16bit x 2banks synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: T431616E, T431616D.
Please refer to the document for exact specifications by model.

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TAGS

T431616E T431616D SDRAM 512K 16bit 2Banks Synchronous DRAM TMT

T431616E Distributor