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T431616B
TMT
569.06 KB
1m x 16 sdram 512k x 16bit x 2banks synchronous dram.
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TE CH
T431616B
SDRAM
FEATURES
+2.7 to +3.6V power supply Dual banks operatio.
The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 word.
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T431616A - 1M x 16 SDRAM
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• 3.3V power supply • Clock cycle time : 6 / 7 / 8 / 10 ns • Dual banks operation • LVTTL patible with multiplexed address .
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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• • • • •
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T431616C
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3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL patible with multiplexed add.
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FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte.
T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte.
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Preliminary T4312816A
8M x 16 SDRAM
2M x 16bit x 4Banks Synchronous DRAM
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• 3.3V power supply • Four banks operation • LVTTL .
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