T431616B Datasheet - TMT

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

T431616B Features

* +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key pr

T431616B General Description

The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle . Range.

T431616B Datasheet (569.06 KB)

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Datasheet Details

Part number:

T431616B

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TMT

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569.06 KB

Description:

1m x 16 sdram 512k x 16bit x 2banks synchronous dram.

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T431616B SDRAM 512K 16bit 2Banks Synchronous DRAM TMT

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T431616B Features

T431616B General Description

Datasheet Details

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