T431616D Datasheet - TMT

T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows.

T431616D Features

* Fast access time: 5/6/7 ns

* Fast clock rate: 200/166/143 MHz

* Self refresh mode: standard and low power

* Internal pipelined architecture

* 512K word x 16-bit x 2-bank

* Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or fu

T431616D Datasheet (759.46 KB)