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T431616D
TMT
759.46 KB
1m x 16 sdram 512k x 16bit x 2banks synchronous dram.
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TE CH
T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns * Fast clock rate: 200/166/143 MHz .
The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally con.
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T431616A - 1M x 16 SDRAM
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SDRAM
FEATURES
• 3.3V power supply • Clock cycle time : 6 / 7 / 8 / 10 ns • Dual banks operation • LVTTL patible with multiplexed address .
T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
(TMT)
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T431616B
SDRAM
FEATURES
+2.7 to +3.6V power supply Dual banks operation LVTTL patible with multiplexed address All in.
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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T431616C
SDRAM
FEATURES
3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL patible with multiplexed add.
T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte.
T4312816A - 8M x 16 SDRAM
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SDRAM
Preliminary T4312816A
8M x 16 SDRAM
2M x 16bit x 4Banks Synchronous DRAM
FEATURES
• 3.3V power supply • Four banks operation • LVTTL .
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