K4S561632H Datasheet (Samsung Electronics)

K4S561632H, 256Mb H-Die SDRAM

The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precis

www.DataSheet4U.com SDRAM 256Mb H-die (x4, x8, x16) CMOS SDRAM 256Mb H-die SDRAM Specification DataShee DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K4S561632H Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are