K4S561632B Datasheet - Samsung semiconductor

K4S561632B, 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May.2000 * Samsung Electronics reserves the righ.
The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Details

Part number:

K4S561632B

Manufacturer:

Samsung semiconductor

File Size:

131.62 KB

Description:

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S561632B-TC/L75 K4S561632B-TC/L1H K4S561632B-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 4M x 16 Sense AMP 4M x 16 4M x 16 4M x 16 R

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K4S561632B 256Mbit SDRAM 16bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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