K4S561632D, K4S Datasheet - Samsung semiconductor

K4S561632D, K4S, 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

www.DataSheet4U.com K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL DataSheet4U.com DataShee Revision 0.1 Aug.2.
The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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K4S-561632D.pdf

K4S561632D Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S561632D, K4S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S561632D, K4S

Manufacturer:

Samsung semiconductor

File Size:

158.60 KB

Description:

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

Note:

This datasheet PDF includes multiple part numbers: K4S561632D, K4S.
Please refer to the document for exact specifications by model.

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Max Freq. 166MHz(CL=3) 133MHz(CL=2) 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE et4U. com Bank Select DataSheet4U. com Data Input Register DataShee LDQM 4M x 16 4M x 16 4M x 16 4M x 16 Refresh Cou

K4S561632D Distributors

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K4S 256Mbit SDRAM 16bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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