Datasheet4U Logo Datasheet4U.com

K4S561632A

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632A Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S561632A General Description

The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S561632A Datasheet (127.17 KB)

Preview of K4S561632A PDF

Datasheet Details

Part number:

K4S561632A

Manufacturer:

Samsung semiconductor

File Size:

127.17 KB

Description:

256mbit sdram 4m x 16bit x 4 banks synchronous dram lvttl.
K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999
* Samsung Electronics reserves the righ.

📁 Related Datasheet

K4S561632B - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to.

K4S561632C - 256Mbit SDRAM (Samsung)
.. K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics.

K4S561632D - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
.. K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL . DataShee Revision 0.1 Aug. 2.

K4S561632E-NC60 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S561632E-NC75 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S561632E-NCL60 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S561632E-NCL75 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S561632E-TC60 - 256Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right t.

TAGS

K4S561632A 256Mbit SDRAM 16bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S561632A Datasheet Preview Page 2 K4S561632A Datasheet Preview Page 3

K4S561632A Distributor