Datasheet4U Logo Datasheet4U.com

K4S561632E-NC75, K4S560432E-NC Datasheet - Samsung semiconductor

K4S561632E-NC75 SDRAM 256Mb E-die

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of .

K4S561632E-NC75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S560432E-NC_Samsungsemiconductor.pdf

This datasheet PDF includes multiple part numbers: K4S561632E-NC75, K4S560432E-NC. Please refer to the document for exact specifications by model.
K4S561632E-NC75 Datasheet Preview Page 2 K4S561632E-NC75 Datasheet Preview Page 3

Datasheet Details

Part number:

K4S561632E-NC75, K4S560432E-NC

Manufacturer:

Samsung semiconductor

File Size:

207.41 KB

Description:

Sdram 256mb e-die.

Note:

This datasheet PDF includes multiple part numbers: K4S561632E-NC75, K4S560432E-NC.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

K4S561632E-NC60 SDRAM 256Mb E-die (Samsung semiconductor)

K4S561632E-NCL60 SDRAM 256Mb E-die (Samsung semiconductor)

K4S561632E-NCL75 SDRAM 256Mb E-die (Samsung semiconductor)

K4S561632E-TC60 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S561632E-TC75 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S561632E-TL60 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S561632E-TL75 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S561632E-UC60 SDRAM 256Mb E-die (Samsung)

TAGS

K4S561632E-NC75 K4S560432E-NC SDRAM 256Mb E-die Samsung semiconductor

K4S561632E-NC75 Distributor