K4S560432E-NC_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S561632E-NC75, K4S560432E-NC
Manufacturer:
Samsung semiconductor
File Size:
207.41 KB
Description:
Sdram 256mb e-die.
Note:
This datasheet PDF includes multiple part numbers: K4S561632E-NC75, K4S560432E-NC.
Please refer to the document for exact specifications by model.
K4S561632E-NC75, K4S560432E-NC, SDRAM 256Mb E-die
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of
K4S561632E-NC75 Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
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