K4S561632E-NC75 - SDRAM 256Mb E-die

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S561632E-NC75
Manufacturer	Samsung semiconductor
File Size	207.41 KB
Description	SDRAM 256Mb E-die
Datasheet	K4S561632E-NC75 Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S561632E-NC75, K4S560432E-NC. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S561632E-NC75 datasheet.

Product details

Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Other Datasheets by Samsung semiconductor

K4S561632E-NC60 - SDRAM 256Mb E-die
K4S561632E-NCL60 - SDRAM 256Mb E-die
K4S561632E-NCL75 - SDRAM 256Mb E-die
K4S561632E-TC60 - 256Mb E-die SDRAM Specification
K4S561632E-TC75 - 256Mb E-die SDRAM Specification
K4S561632E-TL60 - 256Mb E-die SDRAM Specification

Published: Sep 3, 2015 |