K4S561632E-TC60 Datasheet, Specification, Samsung semiconductor

K4S561632E-TC60 Features

  • Specification
  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latenc

PDF File Details

Part number:

K4S561632E-TC60

Manufacturer:

Samsung semiconductor

File Size:

198.76kb

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📄 Datasheet

Description:

256mb e-die sdram specification. The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x

Datasheet Preview: K4S561632E-TC60 📥 Download PDF (198.76kb)
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K4S561632E-TC60 Application

  • Applications Ordering Information Part No. K4S560432E-TC(L)75 K4S560832E-TC(L)75 K4S561632E-TC(L)60/75 Orgainization 64M x 4 32M x 8 16M x 16 Max

TAGS

K4S561632E-TC60
256Mb
E-die
SDRAM
Specification
Samsung semiconductor

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Stock and price

Samsung Electronics Co. Ltd
4M X 16BIT X 4 BANKS CMOS SDRAM 256MBIT E-DIE Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54
ComSIT USA
K4S561632ETC60000
10 In Stock
0
Unit Price : $0
No Longer Stocked
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