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K4S561632E-TC60

256Mb E-die SDRAM Specification

K4S561632E-TC60 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S561632E-TC60 General Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of .

K4S561632E-TC60 Datasheet (198.76 KB)

Preview of K4S561632E-TC60 PDF

Datasheet Details

Part number:

K4S561632E-TC60

Manufacturer:

Samsung semiconductor

File Size:

198.76 KB

Description:

256mb e-die sdram specification.
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003
* Samsung Electronics reserves the rig.

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K4S561632E-TC60 256Mb E-die SDRAM Specification Samsung semiconductor

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