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A2V64S40CTP 64M Single Data Rate Synchronous DRAM 64Mb Synchronous DRAM Specification A2V64S40CTP www.DataSheet.co.kr Zentel Electronics Corp. 6F-1

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S25FL512S 512 Mb (64 MB) FL-S Flash SPI Multi-I/O, 3.0 V Features • CMOS 3.0 V Core with versatile I/O • SPI with Multi-I/O • Density - 512 Mb (64 MB)

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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IS66WVC4M16ALL IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseud

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www.DataSheet4U.com 64Mb DDR SDRAM H5DU6462CTR This document is a general product description and is subject to change without notice. Hynix Semicon

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R1WV6416R Series 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a fa

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Ascend Semiconductor Corporation 64Mb SDRAM ASCEND ASCEND Semiconductor Semiconductor 64M 64M SDRAM SDRAM Data Data sheet sheet Tel: (03)5635888 / F

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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K4S640832C CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Oct. 1999 * Samsung Electronics reserves the right to c

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K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c

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K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to ch

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to ch

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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio

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K4D623238B-GC 64M DDR SDRAM 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ba

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TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The

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www.DataSheet4U.com NT5SV16M4DT NT5SV8M8DT NT5SV4M16DT 64Mb Synchronous DRAM Features • High Performance: -6K fCK tCK CL tAC tAC Clock Frequency Clo

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www.DataSheet4U.com M74DW66500B 2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Produc

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsu

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