40N60FL Datasheet | Specifications & PDF Download

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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600V, 40A, Trench NPT IGBT Features  600V,40A  VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current

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NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

(20 views)