460 Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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DIP Type Ultra Fast Recovery Diodes MUR405 ~ MUR4100 Diodes ■ Features ● High Surge Capability ● Low Leakage ● Low Forward Voltage Drop ● Ultra Fas

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Ordering number : EN6012 LA4600 Monolithic Linear IC LA4600 . Audio Power Amplifier for Radio Cassette Recorders Package Dimensions unit: mm 3046B-

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PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

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:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=30A . High DC Curr

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. P460HVN04.5 Product Specification Rev. 1.0 Model Name: P460HVN04.5 Issue Date: 2022/12/02 ()Preliminary Specifications (＊)Final Specifications Cust

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. P460HVN02.2 Product Specification Rev. 0.1 Model Name: P460HVN02.2 Issue Date : 2022/02/18 (＊)Preliminary Specifications ()Final Specifications Cus

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IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s E

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High Power Infrared Emitter Product No: M TE9460MC Peak Emission Wavelength: 950nm The 950nm IR emitter series is designed for applications requirin

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FUR420 FUR460 4 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD (Plastic) Voltage 200 to 600 V Current 4

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High Power Infrared Emitter Product No: M TE9460WC Peak Emission Wavelength: 950nm The 950nm IR emitter series is designed for applications requirin

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