4Kb Datasheet | Pinout, Features, Price Comparison & PDF

NJG1104KB2 800MHz BAND LNA GaAs MMIC n GENERAL DESCRIPTION NJG1104KB2 is a variable gain low noise amplifier (LNA). At 800MHz band, noise figure is 1

M95040 M95020, M95010 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock FEATURES SUMMARY s Compatible with SPI Bus Serial Interface (

E2D0097-19-94 ¡ Semiconductor MSM9831-xxx ¡ Semiconductor VOICE SYNTHESIS LSI with on-chip 384Kbit MASK ROM This version: Sep. 1999 MSM9831-xxx GEN

M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM FEAT

www.ti.com bq2028 SLUSB22B – OCTOBER 2012 – REVISED NOVEMBER 2012 4Kb EEPROM with Single-Wire HDQ Interface and Temperature Sensor Check for Samples

INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina

FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion (1012) Read/W

FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (1010) read/w

INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina

Voltage :50 to 1000V Features Glass passivated chip junction High case dielectric strength High surge current capability Ideal for printed circuit boa

Voltage :50 to 1000V Features Glass passivated chip junction High case dielectric strength High surge current capability Ideal for printed circuit boa

Voltage :50 to 1000V Features Glass passivated chip junction High case dielectric strength High surge current capability Ideal for printed circuit boa

M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection FEATURES SUMMARY s Industry Standard M

www.DataSheet4U.com FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 R

DS1992/DS1993 1kb/4kb Memory iButton www.iButton.com SPECIAL FEATURES 4096 bits of Read/Write Nonvolatile Memory (DS1993) § 1024 bits of Read/Write N

CAT93C66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of

Elektronische Bauelemente D4KB10 ~ D4KB100 100 ~ 1000 V 4.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant P

Elektronische Bauelemente D4KB05 ~ D4KB10 Voltage 50V ~ 1000V 4.0Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product A suffix of “-C” spec