5-Memory Datasheet | Specifications & PDF Download

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M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Fea

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OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY www.DataSheet4U.com OneNANDTM Specification Density Part No. KFG5616Q1A-DEB5 KFG5616Q1A-PEB5 KFG5616D1A-D

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22-Memory Tone/Pulse Dialer Features · · · · · · · · · · · · HT9320 Series Patent Number: 64097, 86474, 113235(R.O.C.), 5424740(U.S.A.) · · · · · ·

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D at a S he e t, R ev . 0 .8 5 , Ap r . 2 00 4 H YS72 T 640 00 [G/H ]R - x -A (5 12 M B y t e ) H YS72 T 128 00 0[ G/H] R-x-A ( 1 G B y t e ) H YS72

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F

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DYNA FAMILY SM3257ENBAential forHigh Speed USB 2.0 Flash Memory Controller SMI CoinMOfiidncrlyoDatasheet Revision 1.0 Sep 2014 SM3257ENBA Datasheet

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HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n Hi

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m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (5

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www.DataSheet4U.com MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density 1Gb 2Gb Part No. K

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M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, E

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MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80

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MX25L4006E MX25L4006E 3V, 4M-BIT [x 1/x 2] CMOS SERIAL FLASH MEMORY Key Features • Hold Feature • Low Power Consumption • Auto Erase and Auto Program

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W25Q128JV-DTR 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI & DTR Publication Release Date: November 4, 2016 -Revision B W25Q128JV-DTR Tab

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-

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ESMT Features z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB

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Global Mixed-mode Technology G5616 Complete DDR, DDRII and DDRIII Memory Solution Synchronous Buck PWM Controller, 3A LDO, Buffered Reference Fea

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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XM25QH128C 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI This Data Sheet may be revised by subsequent versions 1 or modifications due to

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