5-volt-only Datasheet | Specifications & PDF Download

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Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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FINAL Am29F016 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 Volt ± 10% for read and

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC145407/D MC145407 Advance Information 5 Volt Only Driver/Receiver EIA–232–E and CC

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Am29LV160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operat

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ADVANCE INFORMATION Am29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s

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R MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,0

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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PRELIMINARY Am29F800BT/Am29F800BB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s S

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FEATURES w w • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, er

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Bl

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Features • • • • • • • • • • • • Fast Read Access Time - 100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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