50-1200 Datasheet | Specifications & PDF Download

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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2MBI1200XXE170-50 Power Module (X series) 1700V / 1200A / 2-in-1 package Features Low V CE(sat) Low Inductance Module structure Applications Inverte

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DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev. C, Jan 2025 Description 1 7 T

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WNSC2D501200CW Silicon Carbide Diode Rev.01 - 03 September 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247

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2MBI1200XXE120P-50 Power Module (X series) 1200V / 1200A / 2-in-1 package ■ Features Low V CE(sat) Low Inductance Module structure ■ Applications Inve

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Silicon Carbide (SiC) Diode – EliteSiC, TO247-2, 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode UJ3D1250K2 Description onsemi offers the 3rd generat

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WNSC2D501200W Silicon Carbide Diode Rev.02 - 1 April 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247-2L pla

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IMZ120R350M1H IMZ120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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IMBG120R350M1H IMBG120R350M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features  Very low switching losses  Short circu

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CLA 50 E 1200 HB High Efficiency Thyristor Single Thyristor V RRM = I T(AV)M = I T(RMS) = 1200 V 50 A 79 A Part number CLA 50 E 1200 HB 2 1 3

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isc Thyristors INCHANGE Semiconductor CLA50E1200HB DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar pas

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IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-

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CN24_ _50, CD24_ _50, CC24_ _50 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Fast Recovery Dual Diode Modules

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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Data Sheet Dual 3 MHz, 1200 mA Buck Regulators with Two 300 mA LDOs ADP5034 FEATURES regulators operate in PWM mode when the load is above a pre-

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1200 V Motion SPM) 2 Series FNA25012A General Description The FNA25012A is a Motion SPM® 2 module providing a fully−featured, high−performance inverte

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DATA SHEET www.onsemi.com ASPM34 Series Automotive 3-Phase 1200 V 50 A IGBT Intelligent Power Module NFVA25012NP2T General Description NFVA25012NP2T

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