50-1200 Datasheet | Specifications & PDF Download

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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isc Thyristors INCHANGE Semiconductor CLA50E1200HB DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar pas

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DATA SHEET www.onsemi.com ASPM34 Series Automotive 3-Phase 1200 V 50 A IGBT Intelligent Power Module NFVA25012NP2T General Description NFVA25012NP2T

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Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG50X1200NA 2 1 3 4 DHG50X12

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www.vishay.com MXP120A250FW Vishay MaxPower Semiconductor MaxSiC™ 1200 V N-Channel SiC MOSFET D TO-247 3L S D G Marking Code: 120A250FW G S N-Cha

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CD511225 CD511625 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual Diode POW-R-BLOK™ Modules 250 Amperes/1200

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ME601215 ME601615 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 150 Amperes/12

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ME501210 ME501610 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 100 Amperes/12

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ME601215 ME601615 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 150 Amperes/12

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MBR140~MBR1200 SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory 1.0(25.4)MIN. 40 to 200 Volts CURRENT 1.0

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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www.vishay.com MXP120A250FL Vishay MaxPower Semiconductor MaxSiC™ 1200 V N-Channel SiC MOSFET TO-247 4L Drain pin 1 4 3 2 1 Gate pin 4 Driver s

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CLA 50 E 1200 HB High Efficiency Thyristor Single Thyristor V RRM = I T(AV)M = I T(RMS) = 1200 V 50 A 79 A Part number CLA 50 E 1200 HB 2 1 3

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11.5 ±0.2 14 ±0.2 Replaces DS6282-4 TRENCH Gen5 TMOS Preliminary Information DIM1200DDM17-PT500 Dual Switch IGBT Module DS6282-5 May 2021 (LN40943)

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CD511225 CD511625 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual Diode POW-R-BLOK™ Modules 250 Amperes/1200

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ME501210 ME501610 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 100 Amperes/12

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IDWD50E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Final datasheet Soft and ultra-fast recovery 1200 V Emitter controlled 7

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ME501206 ME501606 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 60 Amperes/120

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MH2205WZ 1200V 50A Fast Recovery Diode VRM IF (Nominal) VF (Typ.) Max. Possible Chips per Wafer 1200V 50A 1.65V 558pcs Outline Wafer Features 1)

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