50N06F Datasheet | Specifications & PDF Download

N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% aval

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4V Drive Nch MOSFET RSD050N06FRA Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be

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w w a D . w S a t e e h U 4 t m o .c STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

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RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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