528-channel Datasheet | Specifications & PDF Download

LG4525B Ver 0.30 LG4525B 528-Channel, 262,144-Color One-Chip Driver with RAM, Power Supply and Gate Circuits for Amorphous TFT-LCD Panels Ver 0.30 2

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isc N-Channel MOSFET Transistor 2SK3528-01R FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source O

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2SK1528(L), 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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July 2011 XRP2527 - XRP2528 Single/Dual Channel Adjustable Current Power Distribution Switch Rev. 1.1.0 GENERAL DESCRIPTION The XRP2527 and XRP2528

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Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer

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2SJ528(L),2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance RDS(on)

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2SJ528(L),2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance RDS(on)

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2SK1528(L), 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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MDV1528 – Single N-Channel Trench MOSFET 30V MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description The MDV1528 uses advanced M

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2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching Low on-resistan

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isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·100% avalanche tested ·Min

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AOD528 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Curre

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AON7528 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge

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Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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TO -22 0A B BUK7528-55A N-channel TrenchMOS standard level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description

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TO -22 0A B BUK7528-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description

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isc N-Channel MOSFET Transistor AOD528 FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

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Crystalfontz Thiscontrollerdatasheetwasdownloadedfrom http://www.crystalfontz.com/controllers/ OTM2201A 528-channel True 6-bit Source Driver with Syst

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Analog Power AM4528C N & P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Ty

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FEATURES Low on resistance (300 Ω typical) Fast switching times tON: 250 ns maximum tOFF: 250 ns maximum Low power dissipation (3.3 mW maximum) Fault

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