550 Datasheet | Specifications & PDF Download

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability *

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BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability *

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS AC/DC POWER SUPPLY 1.5KE-AT series RoHS compliant & Halogen free Product specification– June 30, 2023 V.3 C

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www.eicsemi.com BY550-50G ~ BY550-1000G PRV : 50 - 1000 Volts Io : 5.0 Amperes GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES DO - 201AD FEATUR

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS AC/DC POWER SUPPLY 1.5KE-AT series RoHS compliant & Halogen free Product specification– June 30, 2023 V.3 C

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Fast Recovery Epitaxial Diode (FRED) Single Diode Part number MEO 550-02DA 3 MEO 550-02DA VRRM = 200 V IFAVM = 582 A trr = 150 ns Backside: isolated

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www.eicsemi.com BY550-50G ~ BY550-1000G PRV : 50 - 1000 Volts Io : 5.0 Amperes GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES DO - 201AD FEATUR

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BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability *

(12 views)

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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www.eicsemi.com BY550-50G ~ BY550-1000G PRV : 50 - 1000 Volts Io : 5.0 Amperes GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES DO - 201AD FEATUR

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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IP5506 2A Charging / 2.4A Discharging Power Bank SOC With Integrated Digital Tube Driver 1. Features  Switch buck charger and boost  2.4A synchro

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www.eicsemi.com BY550-50G ~ BY550-1000G PRV : 50 - 1000 Volts Io : 5.0 Amperes GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES DO - 201AD FEATUR

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