550 Datasheet | Specifications & PDF Download

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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Product Specification SPECIFICATION FOR APPROVAL LD550DUN ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL GENERAL 55.0”

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EVALUATION KIT AVAILABLE MAX2550 Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring General Description The MAX2550 is a complete s

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IP5506 2A Charging / 2.4A Discharging Power Bank SOC With Integrated Digital Tube Driver 1. Features  Switch buck charger and boost  2.4A synchro

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.62

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P550QVN06.3 Product Specification Rev 1.1 Model Name: P550QVN06.3 Issue Date: 2022/01/28 ( )Preliminary Specifications (＊)Final Specifications Custom

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S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : -

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www.DataSheet.co.kr HT75XX-2 100mA Low Power LDO Features · Low power consumption · Low voltage drop · Low temperature coefficient · High input volta

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Product Specification SPECIFICATION FOR APPROVAL LC550EGE ( ) Preliminary Specification ( ● ) Final Specification Title BUYER SET MODEL LGE 55.0”

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Optoway XPS-2340MWG 40km / 1550 nm / 10G Multirate XFP Single-Mode Optical Transceiver FEATURES l l l l l l l l l l l l XPS-2340MWG 1 *************

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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SAW Resonator LGER550 The LGER550 is a true one-port， surface-acoustic-wave (SAW) resonator in a surface-mount ceramic QCC8C case. It provides relia

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SB2520FCT thru SB25150FCT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 25 AMPERES ITO-220AB FEATURES Plastic Package has Underwrite

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P550HVN08.0 Product Specification Rev. 1.1 Model Name: P550HVN08.0 Issue Date : 2016/02/18 (Ϡ)Preliminary Specifications ()Final Specifications Cus

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www.DataSheet4U.com The NS16550A UART Design and Application Considerations The NS16550A UART Design and Application Considerations BACKGROUND UARTs

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FA5502P/M Quality is our message FUJI Power Supply Control IC Power Factor Correction FA5502P/M Application Note June `02 Fuji Electric Co., Ltd. Ma

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Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS =

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FKV550N FKV550N 3.3 10.0 2.8 4.2 C 0.5 16.9 8.4 0.8 4.0 2.6 1.35 3.9 1.35 0.85 2.54 2.54 0.45 2.4 2.2 FKV550N – – – – – – – – –

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