Sanyo Semicon Device
5HN02M - N-channel MOS type silicon field effect transistor
5HN02M
No.
5HN02M
µ
µ µ µ Ω Ω
0.425
10V 0V
VIN VIN
VDD=25V ID=100mA RL=250Ω
0.15
3
2.1 1.250 0 0.1
PW=10µs D.C. 1%
D G
VOUT
0.425
5H
Rating:
1
★
(3 votes)
