| Part Number | Description | Manufacture |
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N-CHANNEL MOSFET RDS(on)×Qg，100%， ROHS 。 Very low RDS(on)×Qg,100%avalanche tested, RoHS compliant. / Applications ，，。 For switch mode power supply, uninterruptible power supply, power factor correction. / Equivalent Circuit / Pinning 1 2 3 PIN1：G PIN 2：D P |
 BLUE ROCKET ELECTRONICS |
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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switchi |
 INCHANGE |
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650V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
 SemiHow |
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N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications IN |
INCHANGE |
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N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 7.5 0.6 14 Unit V A ȍ nC Application Switch Mode |
SemiHow |
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MOSFET Extremely low losses due to very low F O M R dson*Qg and E oss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl |
 Infineon Technologies |
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MOSFET Extremely low losses due to very low F O M R dson*Qg and E oss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl |
Infineon Technologies |
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Power Transistor G FD G K K =KE 9 C =K OA L ;@A F? 9 HHD A ;9 L A G FK=N=F E G J = = A ;A =FL EG J = ;G E H9 ;L D A ?@L =J 9 F ;G G D =J ;PL^_\P] X X X t # PL J =E =D QD G OD G K K =KM= L GN=J QD G O $ - + 0 Xgcb%K[ 9 F # 4 =J Q@A ?@ ;G E E ML 9 L A G FJ |
Infineon Technologies |
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MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Ap |
 Infineon |
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650V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
SemiHow |
| Total 29 results |
