HCD65R600S - 650V N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCD65R600S
Manufacturer	SemiHow
File Size	263.62 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCD65R600S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.54 ȍ ID = 7.3 A D-PAK I-PAK 2 1 1 32 3 HCD65R600S HCU65R600S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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Published: Apr 8, 2016 |