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HCD65R660S - 650V N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.6 ȍ ID = 6.2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter V.

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Datasheet Details

Part number HCD65R660S
Manufacturer SemiHow
File Size 283.50 KB
Description 650V N-Channel Super Junction MOSFET
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Full PDF Text Transcription

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HCD65R660S_HCU65R660S June 2015 HCD65R660S / HCU65R660S 650V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.6 ȍ ID = 6.2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.Gate 2. Drain 3.
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