Full PDF Text Transcription for HCD65R660S (Reference)
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HCD65R660S. For precise diagrams, and layout, please refer to the original PDF.
HCD65R660S_HCU65R660S June 2015 HCD65R660S / HCU65R660S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Ro...
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S Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.6 ȍ ID = 6.2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.Gate 2. Drain 3.
HCD65R660S Datasheet
