6-14 Datasheet | Specifications & PDF Download

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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KP3114 High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 700V Power MOSFET and HV Startup Circuit  Integrated rectifie

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www.DataSheet4U.com Transistors 2SC9014 www.DataSheet4U.com

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Free Datasheet http://www.datasheet4u.com/

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74HC14 Hex Schmitt−Trigger Inverter High−Performance Silicon−Gate CMOS The 74HC14 is identical in pinout to the LS14, LS04 and the HC04. The device i

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All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only. Genuine Aircraft Hardware Co. NAS1149 Series, Replac

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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AIRFRAME WASHER - FLAT - REPLACES AN960 EXAMPLE OF PART NUMBER : NAS1149DO432K = AL UMINIUM WASHER, ANODIZE FINISH .250 NOMINAL DIA. .032 THICK NAS114

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1/5’’ UXGA CMOS Image Sensor GC2145 CSP DataSheet V1.0 2013-12-01 GalaxyCore Inc. UXGA CMOS Image Sensor Revision History Version 1.0 2013.12.01  Do

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semic

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P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (T

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor des

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BCR08AM-14A 700V - 0.8A - Triac Low Power Use Features • IT (RMS): 0.8 A • VDRM: 700 V • IRGTI, IRGTI, IRGT III: 5 mA • Tj: 125 °C Data Sheet R07DS12

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