6.08 Datasheet | Specifications & PDF Download

HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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S ta tic R a m M O D U LE M EM O R Y M O D U LE S R a m 4 M x 8 -B G A 3D S R 32M 08V B 2368 3 2 M b it S R a m o r g a n iz e d a s 4 M x 8 , b a s

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ICE SERIES DIP SOCKETS - SCREW MACHINE, OPEN BODY Four-finger beryllium copper contacts provide low, stable contact resistance and accept short IC lea

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MINIATURE SMD CHIP INDUCTORS SMD 0603 Shape and Size :(Dimennsions are in mm ) 0805 1008 1210 TYPE Features : Miniature SMD chip inductors have be

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LC082H1-LY 8 characters x 2 lines + yellow green led backlight ABSOLUTE MAXIMUM RATINGS Item Supply Voltage(Logic) Supply Voltage(LCD) Input Voltage

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A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. SURFACE MOUNT CHIP LED LAMPS 0805 Package Chip Infrared LED Part Number: IR17-21C Package outlines & Re-flow Pr

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A-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. ADD8616A8A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. A

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DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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3PD9708(E) 8-BIT CMOS DIGITAL-TO-ANALOG CONVERTER FEATURES 125 MSPS Update Rate 8-Bit Resolution Linearity: 1/4 LSB DNL Linearity: 1/4 LSB INL Differ

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V-Data Synchronous DRAM VDS7608A4A 4M x 8 Bit x 4 Banks General Description The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo

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3PD9708(E) 8-BIT CMOS DIGITAL-TO-ANALOG CONVERTER FEATURES 125 MSPS Update Rate 8-Bit Resolution Linearity: 1/4 LSB DNL Linearity: 1/4 LSB INL Differ

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A-Data Synchronous DRAM ADS6608A4A 2M x 8 Bit x 4 Banks General Description The ADS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 wo

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A-Data www.DataSheet4U.com ADEBC2808 PC-133 SDRAM Unbuffered SO-DIMM 32Mx64bits SDRAM DIMM based on 16Mx16, 4Bank, 8K Refresh, 3.3V SDRAM General D

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3M Chip Carrier Socket 4-Row, Thru-hole PLCCE Series S Low profile .200″ maximum height S Designed for automatic assembly S High temperature insula

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A-Data Synchronous DRAM ADS7608A4A 4M x 8 Bit x 4 Banks General Description The ADS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo

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V-Data Synchronous DRAM VDS6608A4A 2M x 8 Bit x 4 Banks General Description The VDS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 wo

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V-Data Synchronous DRAM VDS8608A8A 8M x 8 Bit x 4 Banks General Description The VDS8608A8A are four-bank Synchronous DRAMs organized as 8,388,608 wo

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