6.5ns Datasheet | Specifications & PDF Download

SM1A25NSUB-VB SM1A25NSUB-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.110 at VGS = 10 V 0.115 at VGS = 6 V

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BSC520N15NS3 G MOSFET OptiMOSª 3 Power-Transistor, 150 V Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge

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BSC074N15NS5 MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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Silan Microelectronics SVG076R5NT(S)(D)(KL)_Datasheet 100A, 70V N-CHANNEL MOSFET DESCRIPTION SVG076R5NT(S)(D)(KL) is an N-channel enhancement mode

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SM2F05NSU-TRG-VB SM2F05NSU-TRG-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs

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BSC110N15NS5 MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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Silan Microelectronics SVT085R5NT/S/L5_Datasheet 120A, 85V N-CHANNEL MOSFET DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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SM7575NSF ® N-Channel Enhancement Mode MOSFET Features · 75V/100A, RDS(ON)= 7.2mW (Max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devic

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Silan Microelectronics SVGP104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NT(S) is an N-channel enhancement mode power MOS f

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SM1105NSV Features · 100V/3.5A, RDS(ON)= 105mW(max.) @ VGS= 10V RDS(ON)= 175mW(max.) @ VGS= 4.5V · ESD proteced · Reliable and Rugged · Lead Free and

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET General features Type STP75NS04Z VDSS Clamped RDS

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R TRIACS T1235NFP/T1235NSP MAIN CHARACTERISTICS IT(RMS) VDRM IGT 12A 800V 35mA   APPLICATIONS  AC switching  Phase control Package

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Naina Semiconductor Ltd. 125NS(R) Standard Recovery Diodes (Stud and Flat Base Type), 125A Features • Diffused Series • High Current Surge Capabilit

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Naina Semiconductor Ltd. 125NS(R) Standard Recovery Diodes (Stud and Flat Base Type), 125A Features • Diffused Series • High Current Surge Capabilit

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Naina Semiconductor Ltd. 125NS(R) Standard Recovery Diodes (Stud and Flat Base Type), 125A Features • Diffused Series • High Current Surge Capabilit

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Naina Semiconductor Ltd. 125NS(R) Standard Recovery Diodes (Stud and Flat Base Type), 125A Features • Diffused Series • High Current Surge Capabilit

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Silan Microelectronics SVT085R5NT/S/L5_Datasheet 120A, 85V N-CHANNEL MOSFET DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power

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KU10S35NS Thyristor Surge Suppressors 275V, 100A Feature ・Bi-directional characteristic ・High-speed response characteristic ・Large surge current capac

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