60-90 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed S

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MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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MMF60R190Q Datasheet MMF60R190Q 600V 0.19Ω N-channel MOSFET  Description MMF60R190Q is power MOSFET using Magnachip’s advanced super junction techno

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Description The BP6904A is a high voltage, high speed halfbridge pre-driver for power MOSFET and IGBT. It has one input for high side and low side, a

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MMF60R290P Datasheet MMF60R290P 600V 0.29Ω N-channel MOSFET  Description MMF60R290P is power MOSFET using magnachip’s advanced super junction techno

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isc N-Channel MOSFET Transistor FCPF190N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate d

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PNP General-Purpose Transistor, 60 V PN2907A Description The PN2907A is 60 V PNP bipolar transistor designed for use as a general−purpose amplifier o

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AOTF190A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching param

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AOTF190A60CL/AOT190A60CL/AOB190A60CL 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) •

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE OT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE OT AND MUST

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MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technol

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BP6901/BP6908 600V Half-Bridge Pre-Driver Description The BP6901/BP6908 is a high voltage, high speed half-bridge pre-diver for power MOSFET and IG

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SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.005 at VGS = 10 V ID (A) 90d Qg (Typ) 1

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE OT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE OT AND MUST

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FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ December 2014 Fea

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HCD-D690/XB6/XB600 SERVICE MANUAL US Model Canadian Model HCD-D690 AEP Model UK Model E Model Australian Model HCD-XB6 Mexican Model HCD-XB600 HCD-D

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isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch

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Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP60R090P7(L)(FJD)(T)(S)

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