.
Diodes
SMBJ90CA - 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Green SMBJ5.0(C)A - SMBJ170(C)A 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • • • • • • • • 600W Peak Pulse Power Dissipation 5.0V .
Fairchild Semiconductor
FCPF190N60 - N-Channel MOSFET
FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ December 2014 Fea.
ON Semiconductor
FCPF190N60E - N-Channel MOSFET
MOSFET – N-Channel, SUPERFET) II 600 V, 20.6 A, 190 mW FCPF190N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage su.
STMicroelectronics
LET9060C - RF Power Transistor
LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common sou.
Fairchild Semiconductor
FDD5690 - 60V N-Channel PowerTrench MOSFET
FDD5690 June 1999 PRELIMINARY FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to.
IXYS
N0290SD160 - Phase Control Thyristor Stud
Phase Control Thyristor Stud Types N0290SX120 to N0290SX160 The data sheet on the subsequent pages of this document is a scanned copy of existing dat.
MagnaChip
MMF60R190Q - N-Channel MOSFET
MMF60R190Q Datasheet MMF60R190Q 600V 0.19Ω N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip’s advanced super junction techno.
DAWIN
DWM2F90N060 - Ultra-Fast Soft Recovery Diode Module
Apr. 2011 Ultra-Fast Soft Recovery Diode Module Description Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency powe.
Diodes Incorporated
MMBT2907A - 60V PNP Transistor
MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching C.
Vishay Siliconix
SI4900DY - N-Channel 60-V (D-S) MOSFET
SPICE Device Model Si4900DY Vishay Siliconix N-Channel 60-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • .
SSDI
STX7905 - 1 AMP 600 VOLTS NPN TRANSISTOR
PRELIMINARY STX7905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S D.
Fujitsu Media Devices
29LV160TE90TN - MBM29LV160TE90TN
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29.
TaeJin
CP160808T-190x - Multilayer Chip Beads
Multilayer Chip Beads / CP TYPE（Large Current） .Features: 1.Closed magnetic circuit structure allows high density mounting while preventing crosstalk..
MagnaChip
60R190P - N-channel MOSFET
MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn.
MagnaChip
60R900P - MMD60R900P
MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technol.
Coilmaster Electronics
SS1060-90NJ-LF - Spring Air Core Inductors
Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :.
Renesas
ISL90460 - Digitally Controlled Potentiometer
NOT RECOMMENDED FOR NEW DESIGNS POSSIBLE SUBSTITUTE PRODUCT ISL90461, ISL90462, ISL23511 ISL90460 Single Volatile 32-Tap XDCP™ Digitally Controlled Po.
INCHANGE
FCPF190N60 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FCPF190N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate d.
ON Semiconductor
NTBG060N090SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features • Typ. RDS(on) = 60 mW @ VG.
