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HCS60R190S Datasheet - SemiHow

HCS60R190S - 600V N-Channel Super Junction MOSFET

HCS60R190S Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 17.6 0.19 40 Unit V A Ω nC Application

HCS60R190S-SemiHow.pdf

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Datasheet Details

Part number:

HCS60R190S

Manufacturer:

SemiHow

File Size:

238.37 KB

Description:

600v n-channel super junction mosfet.

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