HCS60R150S Datasheet - SemiHow

HCS60R150S - 600V N-Channel Super Junction MOSFET

HCS60R150S Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 21.4 0.15 50 Unit V A Ω nC Application

Datasheet Details

HCS60R150S

SemiHow

238.96 KB

600v n-channel super junction mosfet.

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