HCS60R115FST - 600V N-Channel Super Junction MOSFET

Product Overview

SemiHow

Part number	HCS60R115FST
Manufacturer	SemiHow
File Size	297.65 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCS60R115FST Datasheet
Additional preview pages of the HCS60R115FST datasheet.

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 26.6 115 65 Unit V A mΩ nC.

📁 Similar Datasheet

HCS00MS - Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
HCS02MS - Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)
HCS04MS - Radiation Hardened Hex Inverter (Intersil Corporation)
HCS05MS - Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)
HCS08 - Microcontrollers (Freescale Semiconductor)
HCS0805 - METAL STRIP CURRENT SENSING RESISTORS (HITANO)
HCS08MS - Radiation Hardened Quad 2-Input AND Gate (Intersil Corporation)
HCS101 - Fixed Code Encoder (Microchip)

Other Datasheets by SemiHow

Published: Nov 5, 2024 |