HCS60R115FST Datasheet - SemiHow

HCS60R115FST - 600V N-Channel Super Junction MOSFET

HCS60R115FST Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 26.6 115 65 Unit V A mΩ nC Application

Datasheet Details

HCS60R115FST

SemiHow

297.65 KB

600v n-channel super junction mosfet.

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