60.0 Datasheet | Specifications & PDF Download

600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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NJM4560 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM4560 integrated circuit is a high-gain, wide bandwidth, dual operational amplifier c

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NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1G, NSVMSD601-RT1G Features • NSV Prefix for Automotive and Other Applications Requi

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MSD601−RT1, MSD601−ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features • Pb−Free Packages are Available http://on

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STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except

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LD5760 11/05/2015 High Voltage Green-Mode PWM Controller with Brown-In/Out Function REV. 02 General Description The LD5760 is a Green Mode PWM IC bui

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UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ www.DataSheet4U.com Power MOSFET DESCRIPTION The UTC 12N60 are N-Cha

Rating: 1 ★ (16 votes)

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • Low drain-source ON resistan

Rating: 1 ★ (15 votes)

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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Off-Line PWM Controllers with Integrated Power MOSFET STR-W6000S Series General Descriptions The STR-W6000S series are power ICs for switching power

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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( DOC No. HX8664-B-DS ) HX8664-B 960CH TFT LCD Gate Driver Version 04 December, 2011 HX8664-B 960CH TFT LCD Gate Driver Version 04 December, 2011

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IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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www.DataSheet4U.com Product: Helium P-4602-F Date: January 2003 Praxair Material Safety Data Sheet 1. Chemical Product and Company Identification

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® Z0607 0.8A TRIACS MAIN FEATURES: Symbol V IT(RMS) VDRM/VRRM IGT(Q1) alue 0.8 600 5 Unit A V mA DESCRIPTION The Z0607 is suitable for low power AC

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INNOTION YG602020 50MHz to 4GHz Gain Block MMIC Amplifier Features ■ Operating Frequency 50MHz to 4GHz ■ 18dB Gain at 2.0GHz ■ 22dBm P1dB at 2.0GHz

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

Rating: 1 ★ (13 votes)

HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

Rating: 1 ★ (12 votes)