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60R190P6 Matched Datasheet



Part Number Description Manufacture
IPP60R190P6
N-Channel MOSFET

·Static drain-source on-resistance: RDS(on) ≤0.19Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switch
Manufacture
INCHANGE
IPA60R190P6
N-Channel MOSFET

·Drain Source Voltage- : VDSS=500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSO
Manufacture
INCHANGE
IPW60R190P6
MOSFET

•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforindustrialgradeapplicationsaccord
Manufacture
Infineon
IPB60R190P6
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Manufacture
INCHANGE
IPW60R190P6
N-Channel MOSFET

·Static drain-source on-resistance: RDS(on)≤190mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P
Manufacture
INCHANGE
IPA60R190P6
MOSFET

•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforindustrialgradeapplicationsaccord
Manufacture
Infineon
IPP60R190P6
MOSFET

•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforindustrialgradeapplicationsaccord
Manufacture
Infineon
IPB60R190P6
MOSFET

•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforindustrialgradeapplicationsaccord
Manufacture
Infineon



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