CoolMOS™CP600V 600VCoolMOS™CPPowerTransi.
IPB60R385CP - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB60R385CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .6R385P - IPI60R385CP
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.IPI60R385CP - Power Transistor
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.IPB60R385CP - Power Transistor
IPB60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • High peak current capability • Qualified.60R385CP - IPD60R385CP
CoolMOS™ CP 600V 600V CoolMOS™ CP Power Transistor IPD60R385CP Data Sheet Rev. 2.6 Final Power Management & Multimarket 4VVS=>Aa#:A0<&<,9=4=>:< 7LH.IPA60R385CP - Power-Transistor
IPA60R385CP CoolMOS® Power Transistor Features V)DL:HI;>IPD60R385CP - Power Transistor
CoolMOS™ CP 600V 600V CoolMOS™ CP Power Transistor IPD60R385CP Data Sheet Rev. 2.6 Final Power Management & Multimarket 4VVS=>Aa#:A0<&<,9=4=>:< 7LH.IPP60R385CP - Power Transistor
IPP60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current .IPL60R385CP - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS™ CP Power Transistor IPL60R385CP Data Sheet Rev. 2.1, 2012-01-10 Fina.IPA60R385CP - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.IPD60R385CP - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalan.IPP60R385CP - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPP60R385CP,IIPP60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.385Ω ·Enhancement mode ·Fast Switc.IPI60R385CP - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.385Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.