IPD60R385CP Datasheet, Transistor, Infineon Technologies

PDF File Details

Part number:

IPD60R385CP

Manufacturer:

Infineon ↗ Technologies

File Size:

375.60kb

Download:

📄 Datasheet

Description:

Power transistor.

Datasheet Preview: IPD60R385CP 📥 Download PDF (375.60kb)
Page 2 of IPD60R385CP Page 3 of IPD60R385CP

TAGS

IPD60R385CP
Power
Transistor
Infineon Technologies

📁 Related Datasheet

IPD60R385CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalan.

IPD60R380C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.4 Final Powe.

IPD60R380C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanc.

IPD60R380E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Powe.

IPD60R380E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very hi.

IPD60R380P6 - MOSFET (Infineon)
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET 600V CoolMOSª P6 Power Transistor CoolMOS™ is a revolutionary technology for high voltage .

IPD60R380P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanc.

IPD60R360P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanc.

IPD60R360P7 - MOSFET (Infineon)
IPD60R360P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.

IPD60R360P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avala.

Stock and price

Infineon Technologies AG
MOSFETs N-Ch 600V 9A DPAK-2
Mouser Electronics
IPD60R385CPATMA1
6245 In Stock
Qty : 1 units
Unit Price : $2.33
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts