IPD60R360P7S Datasheet - INCHANGE

IPD60R360P7S, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S *.

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Datasheet Details

Part number:

IPD60R360P7S

Manufacturer:

INCHANGE

File Size:

237.83 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.36Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Suitable for hard and soft switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD60R360P7S N-Channel MOSFET INCHANGE

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