IPD60R360P7S - N-Channel MOSFET
IPD60R360P7S Features
* Static drain-source on-resistance: RDS(on)≤0.36Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Suitable for hard and soft switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P
