IPD60R280CFD7 Datasheet, Mosfet, INCHANGE

IPD60R280CFD7 Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.28Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance

PDF File Details

Part number:

IPD60R280CFD7

Manufacturer:

INCHANGE

File Size:

238.18kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD60R280CFD7 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R280CFD7

INCHANGE

📁 Related Datasheet

IPD60R280CFD7 - Power-Transistor (Infineon)
IPD60R280CFD7 MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to.

IPD60R280P7 - Power-Transistor (Infineon)
IPD60R280P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPD60R280P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanc.

IPD60R280P7S - Power-Transistor (Infineon)
IPD60R280P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE.

IPD60R280P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R280P7S，IIPD60R280P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avala.

IPD60R2K0C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Indu.

IPD60R2K0C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche .

IPD60R2K1CE - MOSFET (Infineon Technologies)
IPD60R2K1CE, IPU60R2K1CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R2K1CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.1Ω ·Enhancement mode: ·100% avalanch.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.