Part number:
IPD60R1K4C6
Manufacturer:
INCHANGE
File Size:
238.26 KB
Description:
N-channel mosfet.
Datasheet Details
IPD60R1K4C6 Features
* Static drain-source on-resistance: RDS(on)≤1.4Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS
Datasheet Details
IPD60R1K4C6
INCHANGE
238.26 KB
N-channel mosfet.
📁 Related Datasheet
IPD60R1K4C6 Power Transistor (Infineon Technologies)
IPD60R1K0CE MOSFET (Infineon Technologies)
IPD60R1K0CE N-Channel MOSFET (INCHANGE)
IPD60R1K5CE MOSFET (Infineon Technologies)
IPD60R1K5CE N-Channel MOSFET (INCHANGE)
IPD60R170CFD7 MOSFET (Infineon)
IPD60R170CFD7 N-Channel MOSFET (INCHANGE)
IPD60R180C7 600V MOSFET (Infineon)
IPD60R1K4C6 Distributor