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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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www.DataSheet4U.com NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS NT5DS16M16CG Features CAS Latency and Frequency CA

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INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR1645CT FEATURES ·Low Forward Voltage ·170℃ Operating Junction Temperature

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT8HTF3264HDY – 256MB MT8HTF6464HDY – 512MB MT8HTF12864HDY – 1GB Features

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - Firs

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HB28E016MM2/HB28D032MM2 HB28D064MM2/HB28B128MM2 MultiMediaCard™ 16 Mbyte/32 Mbyte/64 Mbyte/128 MByte ADE-203-1294A (Z) Rev. 1.0 Nov. 5, 2001 Descript

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. U 184pin One Bank Unbuffered DDR SDRAM MODULE 4 t e e Features h S a t a D . w w w • 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64 D

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEM

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsu

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsu

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F

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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb C ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 5

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Ascend Semiconductor Corporation 64Mb SDRAM ASCEND ASCEND Semiconductor Semiconductor 64M 64M SDRAM SDRAM Data Data sheet sheet Tel: (03)5635888 / F

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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M58LV064A M58LV064B 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst) 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY s WIDE DATA BUS for

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