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Littelfuse
SZNS6A26AFT3G - TVS Diodes
TVS Diodes Surface Mount > 500W > SZNS6A5.0FT3G SZNS6A5.0AFT3G Series Pb Maximum Ratings and Thermal Characteristics Rating Symbol Value Unit P.
Sinopower
SM6A23NSF - N-Channel MOSFET
SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V.
Sinopower
SM6A22NSF - N-Channel MOSFET
SM6A22NSF/SM6A22NSFP/ SM6A22NSU/SM6A22NSUB ® N-Channel Enhancement Mode MOSFET Features • 600V/4A, R= DS(ON) 1.5Ω(max.) @ V= GS 10V V @Tj, m.
Sinopower
SM6A22NSU - N-Channel MOSFET
SM6A22NSF/SM6A22NSFP/ SM6A22NSU/SM6A22NSUB ® N-Channel Enhancement Mode MOSFET Features • 600V/4A, R= DS(ON) 1.5Ω(max.) @ V= GS 10V V @Tj, m.
Sangdest Microelectronics
6A2G - GLASS PASSIVATED SILICON RECTIFIER
6A05G-6A10G Technical Data Data Sheet N0550, Rev. A Green Products 6A05G THRU 6A10G GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 100.
Kyocera
ECH06A20-F - Schottky Barrier Diode
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Littelfuse
SZNS6A22AFT3G - TVS Diodes
TVS Diodes Surface Mount > 500W > SZNS6A5.0FT3G SZNS6A5.0AFT3G Series Pb Maximum Ratings and Thermal Characteristics Rating Symbol Value Unit P.
Sinopower
SM6A23NSUB - N-Channel MOSFET
SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V.
Sinopower
SM6A23NSU - N-Channel MOSFET
SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V.
Sinopower
SM6A22NSUB - N-Channel MOSFET
SM6A22NSF/SM6A22NSFP/ SM6A22NSU/SM6A22NSUB ® N-Channel Enhancement Mode MOSFET Features • 600V/4A, R= DS(ON) 1.5Ω(max.) @ V= GS 10V V @Tj, m.
Unity Opto Technology
MIE-526A2U - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-526A2U is infrared emitting diodes in GaAs technology with AlGaAs window coati.
Sinopower
SM6A24NSU - N-Channel MOSFET
SM6A24NSF/SM6A24NSFP/ SM6A24NSU/SM6A24NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/8A, RDS(ON)= 0.59W(max.) @ VGS= 10V V @Tj, max=700V .
Micro Commercial Components
6A2 - 6 Amp Rectifier 50 - 1000 Volts
MCC Features • • • • • Low Cost Low Forward Voltage Drop High Current Capability High Surge Current Capability Low Leakage omponent.
Dc Components
6A2M - TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
DC COMPONENTS CO., LTD. R 6A05M THRU 6A10M RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CUR.
HITANO
6A2M - SILICON RECTIFIER
HITANO ENTERPRISE CORP. 6A05M THRU 6A10M TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes FEATURE.
KD
6A20S - GENERAL PURPOSE SILICON RECTIFIER
6A05S THRU 6A100S GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Ampere FEATURES ● The plastic package ca.
Taiwan Semiconductor
6A20 - 6.0 AMPS. Silicon Rectifiers
6A05 - 6A100 6.0 AMPS. Silicon Rectifiers R-6 Features High efficiency, Low VF High current capability High reliability High surge current capability.
Taiwan Semiconductor
6A20G - Glass Passivated Rectifiers
6A05G – 6A100G Taiwan Semiconductor 6A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● Hi.
Zetex Semiconductors
ZXMN6A25DN8 - DUAL 60V N-CHANNEL MOSFET
ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V: RDS(ON)= 0.055 DESCRIPTION ; ID= 4.7A This new generation of Trench M.
