6A2-G Datasheet | Specifications & PDF Download

FC6A21060L Gate Resistor installed Dual N-Channel MOS FET For lithium-ion secondary battery protection circuit FC6A21060L Unit: mm „ Features y Low

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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150D Vishay Sprague Solid-Electrolyte TANTALEX® Capacitors Hermetically-Sealed, Axial-Lead FEATURES • Terminations: Tin/lead (SnPb), 100 % Tin (RoHS

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SM6A22NSF/SM6A22NSFP/ SM6A22NSU/SM6A22NSUB ® N-Channel Enhancement Mode MOSFET Features • 600V/4A, R= DS(ON) 1.5Ω(max.) @ V= GS 10V V @Tj, m

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ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V: RDS(ON)= 0.055 DESCRIPTION ; ID= 4.7A This new generation of Trench M

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ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0 Description This

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ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0 Description This

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６Ａ ２００Ｖ SBD Type ECH06A20 4 12 3 4 1 23 INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. VOLTAGE ECH06A20 (per Arm) Tj

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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SM6A24NSF/SM6A24NSFP/ SM6A24NSU/SM6A24NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/8A, RDS(ON)= 0.59W(max.) @ VGS= 10V V @Tj, max=700V

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IS61DDPB44M18A/A1/A2 IS61DDPB42M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM (2.5 Cycle Read Latency) ADVANCED INFORMATION JULY

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IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM (2.5 Cycle Read Latency) ADVANCED INFORMATION JU

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GSIB6A20N, GSIB6A40N, GSIB6A60N, GSIB6A80N www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • U

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IS61QDP2B44M18A/A1/A2 IS61QDP2B42M36A/A1/A2 4Mx18, 2Mx36 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.0 Cycle Read Latency) DECEMBER 2014 FEATURES DESC

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︳ FEATURES * 7.5W Isolated Output * 24-Pin DIP Package * Efficiency to 87% * 2:1 Input Range * Regulated Outputs * Pi Input Filter * Continuous Short

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︳ FEATURES * 7.5W Isolated Output * 24-Pin DIP Package * Efficiency to 87% * 2:1 Input Range * Regulated Outputs * Pi Input Filter * Continuous Short

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Signal Signal Relays D2n* Relay V23105 AXICOM n Standard DIL relay n Dimensions 20x10x11mm (.795x.394x.433”) n Switching and continous current 3A n

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Not Available for New Designs, Use GSIB6A20, GSIB6A40, GSIB6A60, GSIB6A80 www.vishay.com VSIB6A20, VSIB6A40, VSIB6A60, VSIB6A80 Vishay General Semic

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